1/9 february 2005 stW26NM60 n-channel 600v - 0.125 ? - 30a to-247 mdmesh? mosfet table 1: general features typical r ds (on) = 0.125 ? high dv/dt and avalanche capabilities improved esd capability low input capacitance and gate charge low gate input resistance description the mdmesh? is a new revolutionary mosfet technology that associates the multiple drain pro- cess with the company?s powermesh? horizon- tal layout. the resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. the adoption of the company?s proprietary strip tech- nique yields overall dynamic performance that is significantly better than that of similar competi- tion?s products. applications the mdmesh? family is very suitable for increas- ing power density of high voltage converters allow- ing system miniaturization and higher efficiencies. table 2: order codes figure 1: package figure 2: internal schematic diagram type v dss r ds(on) i d stW26NM60 600 v < 0.135 ? 30 a to-247 1 2 3 sales type marking package packaging stW26NM60 W26NM60 to-247 tube rev. 5
stW26NM60 2/9 table 3: absolute maximum ratings ( ) pulse width limited by safe operating area (1) i sd 26a, di/dt 200a/s, v dd v (br)dss , t j t jmax. table 4: thermal data table 5: avalanche characteristics electrical characteristics (t case =25 c unless otherwise specified) table 6: gate-source zener diode protection features of gate-to-source zener diodes the built-in back-to-back zener diodes have specifically been designed to enhance not only the device ? s esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device ? s integrity. these integrated zener diodes thus avoid the usage of external components. symbol parameter value unit v ds drain-source voltage (v gs = 0) 600 v v dgr drain-gate voltage (r gs = 20 k ? ) 600 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 30 a i d drain current (continuous) at t c = 100 c 18.9 a i dm ( ) drain current (pulsed) 120 a p tot total dissipation at t c = 25 c 313 w derating factor 2.5 w/ c v esd(g-s) gate source esd(hbm-c=100pf, r=1.5k ?) 6000 v dv/dt (1) peak diode recovery voltage slope 15 v/ns t j t stg operating junction temperature storage temperature -55 to 150 c rthj-case thermal resistance junction-case max 0.4 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 13 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 740 mj symbol parameter test conditions min. typ. max. unit bv gso gate-source breakdown voltage igss= 1ma (open drain) 30 v
3/9 stW26NM60 table 7: on /off table 8: dynamic table 9: source drain diode (1) pulsed: pulse duration = 300 s, duty cycle 1.5 %. (2) pulse width limited by safe operating area. (3) c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss . symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c = 125 c 10 100 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5v r ds(on static drain-source on resistance v gs = 10 v, i d = 13 a 0.125 0.135 ? symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds = 15 v , i d = 13 a 20 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f = 1 mhz, v gs = 0 2900 900 40 pf pf pf c oss eq (3) . equivalent output capacitance v gs = 0 v, v ds = 0 to 400 v 300 pf t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 300 v, i d = 13 a, r g = 4.7 ?, v gs = 10 v (see figure 15) 35 22 14 20 ns ns ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 480 v, i d = 26 a, v gs = 10 v (see figure 18) 73 20 37 102 nc nc nc symbol parameter test conditions min. typ. max. unit i sd i sdm (2) source-drain current source-drain current (pulsed) 26 104 a a v sd (1) forward on voltage i sd = 26 a, v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 26 a, di/dt = 100 a/s v dd = 100v (see figure 16) 450 7 30.5 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 26 a, di/dt = 100 a/s v dd = 100v, t j = 150 c (see figure 16) 560 9 32.5 ns c a
stW26NM60 4/9 figure 3: safe operating area figure 4: output characteristics figure 5: transconductance figure 6: thermal impedance figure 7: transfer characteristics figure 8: static drain-source on resistance
5/9 stW26NM60 figure 9: gate charge vs gate-source voltage figure 10: normalized gate thereshold volt- age vs temperature figure 11: dource-drain diode forward char- acteristics figure 12: capacitance variations figure 13: normalized on resistance vs tem- perature
stW26NM60 6/9 figure 14: unclamped inductive load test cir- cuit figure 15: switching times test circuit for resistive load figure 16: test circuit for inductive load switching and diode recovery times figure 17: unclamped inductive wafeform figure 18: gate charge test circuit
7/9 stW26NM60 dim. mm. inch min. typ max. min. typ. max. a 4.85 5.15 0.19 0.20 a1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 b2 3.0 3.40 0.118 0.134 c 0.40 0.80 0.015 0.03 d 19.85 20.15 0.781 0.793 e 15.45 15.75 0.608 0.620 e5.45 0.214 l 14.20 14.80 0.560 0.582 l1 3.70 4.30 0.14 0.17 l2 18.50 0.728 ? p 3.55 3.65 0.140 0.143 ? r 4.50 5.50 0.177 0.216 s5.50 0.216 to-247 mechanical data
stW26NM60 8/9 table 10: revision history date revision description of changes 24-june-2004 4 new stylesheet. no content change 04-feb-2004 5 new id current on title in first page
9/9 stW26NM60 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2005 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america
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